The increasing availability of high-resistivity substrates and large biasing voltage capabilities in
commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors
(DMAPS) in high-energy physics experiments. LF-Monopix2 is the latest iteration of a DMAPS
development line designed in $150\,\mathrm{nm}$ LFoundry technology, which features a large scale $(1×2)\,\mathrm{cm}^2$
chip size divided into $(56 × 340)$ pixels with a pitch of $(150 × 50)\,\mathrm{µm}^2$ . Implementation of the full
pixel electronic circuitry within a large charge collection node compromises the sensor's noise and
power budget while assuring short drift distances and a homogeneous electric field in the sensing
part of the detector that increase the radiation hardness. Laboratory characterization and beam
test performance of $100\,\mathrm{µm}$ thick LF-Monopix2 sensors with backside processing and irradiated
to $1 × 10^{15}\,\mathrm{n}_\mathrm{eq}\,\mathrm{cm}^{−2}$ of NIEL fluence are presented.