Devices based on 2D materials for on-chip amplification of ionization charges
February 09, 2017
August 03, 2017
Pixels detectors are widely used ionizing radiation detection devices in high-energy physics (HEP) experiments. Segmented detectors have been employed for many years due to the need to simultaneously track the thousands of particles emerging from modern colliders. For more precise and accurate measurements one would like to have faster, less noisy and smaller pixels, but current technology imposes several limits on these characteristics.
The aim of this work is to explore the possible applications of bi-dimensional materials such as Graphene or transition metal dichalcogenide monolayers (TMDs) to address these problems. In particular, one wants to determine whether nano-electronic devices based on 2D materials could be used to obtain built-in pre-amplification of the pixel signal, thus achieving better detection performance. The working principle is the field-effect modulation of the channel conductivity in a 2D material-based transistor, due to the presence of ionization charges in a silicon absorber. Several architectures are tested, and a final device of choice is presented, with a sketch of a realistic readout system and its noise figure. The conductance modulation due to incoming particles is found to be more than $30\%$, resulting in a strong current signal, which leads to very favourable signal-to-noise ratios (SNR).
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