PixFEL: development of an X-ray diffraction imager for future FEL applications
February 09, 2017
August 03, 2017
A readout chip for diffraction imaging applications at new generation X-ray FELs (Free Electron Lasers) has been designed in a 65~nm CMOS technology. It consists of a $ 32 \times 32 $ matrix, with square pixels and a pixel pitch of $ 110\ \mu m $. Each cell includes a low-noise charge sensitive amplifier (CSA) with dynamic signal compression, covering an input dynamic range from 1 to $ 10^4 $ photons and featuring single photon resolution at small signals at energies from 1 to 10 keV. The CSA output is processed by a time-variant shaper performing gated integration and correlated double sampling. Each pixel includes also a small area, low power 10-bit time-interleaved Successive Approximation Register (SAR) ADC for in-pixel digitization of the amplitude measurement. The channel can be operated at rates up to 4.5~MHz, to be compliant with the rates foreseen for future X-ray FEL machines. The ASIC has been designed in order to be bump bonded to a slim/active edge pixel sensor, in order to build the first demonstrator for the PixFEL (advanced X-ray PIXel cameras at FELs) imager.
How to cite
Metadata are provided both in "article" format (very similar to INSPIRE) as this helps creating
very compact bibliographies which can be beneficial to authors and
readers, and in "proceeding" format
which is more detailed and complete.