This paper presents a HV/HR-MAPS detector developed in the framework of the HV-CMOS collaboration for the ATLAS Inner Tracker update of the HL-LHC era. It was fabricated with a 150 nm HV-CMOS process which includes a layer to isolate the bulk of the PMOS transistors from the collecting node of the sensor. All the front-end electronics are integrated in the pixel, which is of only 50 µm x 50 µm, and include a preamplifier, shaper, discriminator and digital block with FEI3 column drain architecture.