PoS - Proceedings of Science
Volume 343 - Topical Workshop on Electronics for Particle Physics (TWEPP2018) - Posters
High-Voltage Silicon JFET for HV Multiplexing for the ATLAS MicroStrip Staves
G. Giacomini*, W. Chen and D. Lynn
Full text: pdf
Pre-published on: May 20, 2019
Published on: July 25, 2019
We present a new kind of silicon device: a High-Voltage vertical JFET, originally conceived
as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon
microstrip Inner Tracker (ITk). The development of the geometry as well as of the technology
process flow was carried out by the help of numerical simulations, which confirmed the feasibility
of such a device. Using a planar process flow, both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Laboratory, starting
from epitaxial wafers which have been grown according to strict specifications. Probe station
measurements of un-irradiated devices show low leakage current and high breakdown voltage (up
to 600V) in the OFF state, and high currents in the ON state. These JFETs, thus, satisfy most
of the specs required by the HV Multiplexing switch. However, only irradiation campaigns with
protons and neutrons will assess their suitability as rad-hard switches
DOI: https://doi.org/10.22323/1.343.0030
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