PoS - Proceedings of Science
Volume 343 - Topical Workshop on Electronics for Particle Physics (TWEPP2018) - Posters
Hybrid GaN and CMOS Integrated Module Radiation Hard DC-to-DC Converter
A. Hegde, J. Kitchen, Y. Long, A. Odishvili, P. Bikkina, A. Levy and E. Mikkola*
Full text: pdf
Pre-published on: June 13, 2019
Published on: July 25, 2019
A radiation-hard, compact, low-mass, hybrid GaN and CMOS integrated module DC-DC converter has
been designed with an input voltage of up to 14V regulated down to an output voltage of 1.5V, with 6A
maximum load current. The converter exhibits greater than 70% efficiency. Discrete GaN transistors are
used for the power stage, and the controller circuitry and power device drivers are integrated on a 0.35um
CMOS chip. Radiation hardening by design (RHBD) techniques have been employed to meet TID levels
greater than 150 megarad (Si). This work presents the design and successful measurement results of the
custom-designed CMOS driver/controller integrated circuit (IC) and the entire DC-DC converter module
that uses this IC. The next version of the controller/driver IC has been sent to fabrication in the fall 2018
and it is expected to provide 18V to 1.5V conversion with >75% efficiency
DOI: https://doi.org/10.22323/1.343.0031
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