PoS - Proceedings of Science
Volume 364 - European Physical Society Conference on High Energy Physics (EPS-HEP2019) - Detector R&D and Data Handling
Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC
D. Zuolo,* R. Ceccarelli, M. Meschini, L. Viliani, M. Dinardo, S. Gennai, D. Menasce, L. Moroni, L. Demaria, E. Monteil, L. Gaioni, A. Messineo, E. Curras, J. Duarte, M. Fernandez, G. Gomez, A. Garcia, J. Gonzalez, E. Silva, I. Vila, R. Mendicino, M. Boscardin, G.F. Dalla Betta
*corresponding author
Full text: Not available
Abstract
The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few $10^{16}~ \rm{n_{eq}/cm^2}$ at $\sim 3 \, \rm{cm} $ from the interaction point.
To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC.
The R\&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100\,$\mu {\rm m}$ and 130\,$\mu {\rm m}$ active thickness for planar sensors, and 130\,$\mu {\rm m}$ for 3D sensors, the thinnest ones ever produced so far.
Prototypes of hybrid modules, bump-bonded to the RD53A readout chip, have been tested on beam.
First results on their performance before and after irradiation are presented.
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