PoS - Proceedings of Science
Volume 390 - 40th International Conference on High Energy physics (ICHEP2020) - Parallel: Accelerator: Physics, Performance, and R&D for Future Facilities
Proton and x-ray irradiation of silicon devices at the TIFPA-INFN facilities in Trento
B. Di Ruzza
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Pre-published on: January 12, 2021
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Abstract
Proton and x-ray irradiation are essential procedures required to characterize the effects of TIDand displacement damage designing silicon sensors for charged particle. The experimental areaof the Trento Proton Therapy Center, a medical facility located in Trento (Italy), allows toperform proton irradiation on SiPMs, solid state silicon based (pixel, drift and microstrip)sensors and experimental electronic devices using protons with energy in the range of 70-230MeV. The irradiation isocenter is in air, the circular beam spot has a gaussian intensity profilewith a sigma varying between 2.74 mm and 6.92 mm and a maximum proton rate of about10^10 protons/s. For the energy of 120 MeV a devoted set-up, called dual ring, allows to achievea uniform beam spot on a circumference of 30 mm radius. This energy range is especiallysuitable for testing devices oriented to medical and space applications, but it is also useful forhigh-energy detector upgrades studies. In the TIFPA-INFN laboratories is also located a tungstenanode x-ray source allowing a TID characterization of experimental silicon devices. In thisdocument will be given a description of the experimental area of the Trento Proton TherapyCenter and some results of the proton and x-ray irradiation on prototype sensors for chargedparticle.
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