PoS - Proceedings of Science
Volume 390 - 40th International Conference on High Energy physics (ICHEP2020) - Parallel: Detectors for Future Facilities (incl. HL-LHC), R&D, Novel Techniques
Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond
C. Solans Sanchez,* P. Allport, D. Bortoletto, I. Asensi Tortajada, C. Buttar, R. Cardella, F. Dachs, H. Denizli, M. Dyndal, P.M. Freeman, A. Gabrielli, L. Gonella, L. Flores Sanz de Acedo, K. Oyulmaz, H. Pernegger, P. Riedler, A. Sharma, H. Sandeker, W. Snoeys, S. Worm
*corresponding author
Full text: Not available
Abstract
The upgrade of tracking detectors for experiments at the HL-LHC and future colliders requires the development of novel radiation hard silicon sensors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation hard monolithic CMOS sensors. We designed, manufactured and tested DMAPS in the TowerJazz 180~nm CMOS imaging technology with small electrodes pixel designs, that have a pixel pitch well below the current hybrid pixel detectors, and less multiple scattering due to a reduced total silicon thickness. In this document we present the recent results from these sensors manufactured on Czochralski silicon substrates in terms of cluster size, impact on tracking and time resolution from measurements carried out at beam tests on irradiated samples at 1e15 1 MeV $\mathrm{n}_\mathrm{eq}/\mathrm{cm}^{2}$.
How to cite

Metadata are provided both in "article" format (very similar to INSPIRE) as this helps creating very compact bibliographies which can be beneficial to authors and readers, and in "proceeding" format which is more detailed and complete.

Open Access
Creative Commons LicenseCopyright owned by the author(s) under the term of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.