The Nuova Officina Assergi NOA is a functional Research and
Technological Development Unit realized at LNGS and operational starting from February 2023. Flagship of INFN for the production
and integration of silicon devices operating at cryogenic temperatures, NOA occupies an area of 420 m2
with reduced radon concentration and is equipped with cutting-edge technology machines: a cryogenic Silicon
device probe, a semi-automatic dicing system, a high-speed dual bond head flip-chip bonder and an ultrasonic wedge-wedge and ball-wedge wire bonder.
The next 2 years the facility will host the DarkSide-20k activities for the packaging and assembly of more than 21 m2 of cryogenic photosensors, that will be integrated in the Time Projection Chamber of the detector. In perspective NOA, could offer a valid alternative to industrial processes often costly, becoming an opportunity for all the collaborations and research centers, interested in the development of emerging technologies of interconnections for the integration of
customized Silicon photomultipliers such as Trough
Silicon Vias or module integration of hybrid and
monolithic pixel detectors. We will discuss in details the NOA facility as a possibility for assembling photosensors for dark matter detectors