PoS - Proceedings of Science
Volume 448 - The 32nd International Workshop on Vertex Detectors (VERTEX2023) - New developments: Monolithic
Test-beam performance of proton-irradiated, large-scale depleted monolithic active pixel sensors in 150 nm CMOS technology
L. Schall*, M. Babero, P. Barrilon, C. Bespin, P. Breugnon, I. Caicedo, Y. Degerli, J.C. Dingfelder, T. Hemperek, T. Hirono, F. Hügging, H. Krüger, P. Pangaud, P. Rymaszewski, P. Schwemling, T. Wang, N. Wermes and S. Zhang
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Pre-published on: February 05, 2024
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The increasing availability of high-resistivity substrates and large biasing voltage capabilities in
commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors
(DMAPS) in high-energy physics experiments. LF-Monopix2 is the latest iteration of a DMAPS
development line designed in $150\,\mathrm{nm}$ LFoundry technology, which features a large scale $(1×2)\,\mathrm{cm}^2$
chip size divided into $(56 × 340)$ pixels with a pitch of $(150 × 50)\,\mathrm{µm}^2$ . Implementation of the full
pixel electronic circuitry within a large charge collection node compromises the sensor's noise and
power budget while assuring short drift distances and a homogeneous electric field in the sensing
part of the detector that increase the radiation hardness. Laboratory characterization and beam
test performance of $100\,\mathrm{µm}$ thick LF-Monopix2 sensors with backside processing and irradiated
to $1 × 10^{15}\,\mathrm{n}_\mathrm{eq}\,\mathrm{cm}^{−2}$ of NIEL fluence are presented.
DOI: https://doi.org/10.22323/1.448.0043
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