Volume 472 - 20th International Workshop on Polarized Source, Targets, and Polarimetry (PSTP2024) - Polarized Electron Sources II
High polarization InAlGaAs/AlGaAs photocathodes grown using MBE
M.L. Stutzman*, C. Palmstrøm, A. Engel and Y. Wu
*: corresponding author
Full text: pdf
Pre-published on: March 11, 2025
Published on: —
Abstract
Strained superlattices of GaAs/GaAsP grown using molecular beam epitaxy (MBE) have been

used for more than 20 years to generate high polarization electron beams for nuclear physics.

GaAs/GaAsP superlattices have several manufacturing challenges, including the thick graded layer

required for the virtual GaAsP substrate, the significant difference in optimal growth temperatures

for GaAs and GaAsP, and the scarcity of MBE systems using phosphorus. InAlGaAs/AlGaAs

strained superlattice photocathode are an alternative structure that eliminates many of hurdles

to growing GaAs/GaAsP in MBE systems. Measurements of quantum efficiency and polarization

from InAlGaAs/AlGaAs will be presented. These include studies on a variety of growth parameters

to optimize performance, including digital alloys, growth temperature variations, and variation

in structure.
DOI: https://doi.org/10.22323/1.472.0042
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