Test results of irradiated CMOS pixel circuits in 150 nm CMOS technology for the ATLAS Inner Tracker Upgrade
Z. Chen*, M. Barbero, P. Barrillon, C. Bespin, S. Bhat, P. Breugnon, I. Caicedo, Y. Degerli, S. Godiot, T. Hemperek, T. Hirono, F.J. Iguaz, H. Krüger, P. Pangaud, R. Alexandre, P. Rymaszewski, P. Schwemling, M. Vandenbroucke, T. Wang and N. Wermes
May 20, 2019
July 25, 2019
A major upgrade for the ATLAS Inner Tracker at the Large Hadron Collider (LHC) is scheduled in 2026. Depleted CMOS pixel sensors on high resistivity substrates in LFoundry 150 nm technology are an interesting option for this upgrade. Recently two large demonstrators, one based on a hybrid concept called LF-CPIX and the other based on a fully monolithic concept called LF-Monopix have been produced. Both prototypes were characterized in the lab and after irradiation up to 160 MRad under CERN’s 24 GeV Proton Synchrotron beam. In this work, we will describe the behavior under radiation of the two prototypes.
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