TCAD Device Simulations of Irradiated Silicon Detectors
F.R.P. Pinto*, M. Moll, J. Schwandt, E.G. Villani, Y. Gurimskaya and R. Millán
*: corresponding author
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Pre-published on: July 08, 2020
Published on: September 14, 2020
Abstract
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. This review examines the challenges ahead for different kind of detector devices, with attention to the acceptor removal effect in LGADs, surface damage for Monolithics and Strips and bulk damage for everyone.
DOI: https://doi.org/10.22323/1.373.0051
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