The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel
detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall
lower power consumption compared to previously used processes. A combination of Technology
Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations are used to understand
the physical processes within the sensing element and thus the overall performance of the pixel
detector. The response of the sensors can then be tested in laboratory and test beam facilities and
compared to simulation results.
Transient simulations allow for studying the response of the sensor over time, such as the signal
produced after a charged particle passes through the sensor. The study of these signals is important
to understand the magnitude and timing of the response from the sensors and improve upon them.
While TCAD simulations are accurate, the time required to produce a single pulse is large compared
to a combination of MC and TCAD simulations.
In this work, a validation of the transient simulation approach and studies on charge collection are
presented.